自学教程：C++ FLASH_EraseSector函数代码示例

/** * @brief  Erases PAGE and PAGE1 and writes VALID_PAGE header to PAGE * @param  None * @retval Status of the last operation (Flash write or erase) done during *         EEPROM formating */static FLASH_Status EE_Format(void) {	FLASH_Status FlashStatus = FLASH_COMPLETE;	/* Erase Page0 */	FlashStatus = FLASH_EraseSector(PAGE0_ID, FLASH_VOLTAGE_RANGE );	/* If erase operation was failed, a Flash error code is returned */	if (FlashStatus != FLASH_COMPLETE) {		return FlashStatus;	}	/* Set Page0 as valid page: Write VALID_PAGE at Page0 base address */	FlashStatus = FLASH_ProgramHalfWord(PAGE0_BASE_ADDRESS, VALID_PAGE );	/* If program operation was failed, a Flash error code is returned */	if (FlashStatus != FLASH_COMPLETE) {		return FlashStatus;	}	/* Erase Page1 */	FlashStatus = FLASH_EraseSector(PAGE1_ID, FLASH_VOLTAGE_RANGE );	/* Return Page1 erase operation status */	return FlashStatus;}

FLASH_Status eraseHelper(uint32_t pageAddress){  #if defined(SERIES_STM32F37x) || defined(SERIES_STM32F30x)  return FLASH_ErasePage(pageAddress);#else  if (pageAddress == PAGE0_BASE_ADDRESS)    return FLASH_EraseSector(PAGE0_ID, VOLTAGE_RANGE);  else if (pageAddress == PAGE1_BASE_ADDRESS)    return FLASH_EraseSector(PAGE1_ID, VOLTAGE_RANGE);  else    return FLASH_ERROR_PROGRAM;#endif}

u8 bsp_Firmware_Erase(u8 APP_Select){	u8 status=0;	FLASH_Unlock();									//解锁   FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存 	FLASH_ClearFlag(FLASH_FLAG_EOP|FLASH_FLAG_OPERR|FLASH_FLAG_WRPERR|  FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);	if(APP_Select)	status=FLASH_EraseSector(FLASH_Sector_6 ,VoltageRange_3);//VCC=2.7~3.6V之间!!	else	status=FLASH_EraseSector(FLASH_Sector_5 ,VoltageRange_3);//VCC=2.7~3.6V之间!!		MCU_WriteStatus=status;	return MCU_WriteStatus;}

void Flash_EraseDataBuffer(){    FLASH_Unlock();    FLASH_ClearFlag( FLASH_FLAG_EOP |  FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);    // Erase Sectors    // 8-10 is data logger    FLASH_EraseSector(FLASH_Sector_8, VoltageRange_3);    FLASH_EraseSector(FLASH_Sector_9, VoltageRange_3);    FLASH_EraseSector(FLASH_Sector_10, VoltageRange_3);    Flash_ResetFlashAddress();    FLASH_Lock();}

/**  * @brief  Main program  * @param  None  * @retval None  */ErrorStatus eep_erase( void ){	ErrorStatus Err = SUCCESS;		/* Enable the flash control register access */	FLASH_Unlock();	/* Erase the user Flash area ************************************************/	/* area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR */	/* Clear pending flags (if any) */  	FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | 				  FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR); 	/* Get the number of the start and end sectors */	uwStartSector = GetSector(FLASH_USER_START_ADDR);	/* Device voltage range supposed to be [2.7V to 3.6V], the operation will	   be done by word */ 	if (FLASH_EraseSector(uwStartSector, VoltageRange_3) != FLASH_COMPLETE)	{ 	  /* Error occurred while sector erase. 		 User can add here some code to deal with this error  */		Err = ERROR;	}		FLASH_Lock(); 		return Err;}

static bool restoreCalibrateParamToFlash ( CalibrateParam* p ){  int i ;  int n  =  sizeof(*p) / sizeof(uint32_t) ;  uint32_t Address = CALIBRATE_PARAM_ADDR ;  uint32_t *d = (uint32_t *) p ;      FLASH_Unlock();  FLASH_EraseSector(FLASH_Sector_5,VoltageRange_3);    for ( i=0;i<n;i++){    FLASH_ProgramWord( Address, *d );    d ++ ;    Address += 4;  }  FLASH_Lock();    // 检验是否正确写入  bool ret = true ;  d = (uint32_t *) p ;  uint32_t *d2 = (uint32_t*)CALIBRATE_PARAM_ADDR ;  for ( i=0; i<n; i++ )  {    if ( d[i] != d2[i] )    {      ret = false ;      break ;    }  }    return ret ;}

bool write(uint32_t addr, uint16_t * data, const uint16_t data_len){  int sector;  /* Check bounds */  if ((addr >= (SECTOR11_START_ADDR + SECTOR_SIZE_128KB)) ||      (addr < SECTOR0_START_ADDR))    return false;  /* Need to compute sector to erase */  if (addr >= SECTOR5_START_ADDR)    sector = 5 + ((addr - SECTOR5_START_ADDR)/SECTOR_SIZE_128KB);  else if (addr >= SECTOR4_START_ADDR)    sector = 4;  else    sector = (addr - SECTOR0_START_ADDR)/SECTOR_SIZE_16KB;  /* Unlock flash */  FLASH_Unlock();  FLASH_EraseSector(sector * 0x08, VoltageRange_3);  /* Write data */  for (int i = 0; i < data_len; i += 2)  {    FLASH_ProgramHalfWord(addr, *data);    data++; addr += 2;   }  return true;}

int stm32_flash_erase(uint32_t offset, uint16_t len){	uint32_t StartSector, EndSector;	uint32_t flash_user_start_addr, flash_user_end_addr;	uint32_t addr;	uint8_t i;		/* Get the number of the start and end sectors */	flash_user_start_addr = ADDR_FLASH_SECTOR_0 + offset;	flash_user_end_addr = flash_user_start_addr + len;  StartSector = GetSector(flash_user_start_addr);	EndSector = GetSector(flash_user_end_addr);		/* Erase sector */	for (i = StartSector; i <= EndSector; i += 8) {    /* Device voltage range supposed to be [2.7V to 3.6V], the operation will       be done by word */     if (FLASH_EraseSector(i, VoltageRange_3) != FLASH_COMPLETE) { 			return -1;    }	}	return 0;}

/**  * @brief  
C++ FLASH_PrefetchBufferCmd函数代码示例
C++ FLASH_ErasePage函数代码示例